M-10 Grid Pattern 10µm

EM-Tec M-1 and M-10 Grid Pattern Calibration Standards
with 1um and 10um pitch grid patterns, NIST traceable

Order M-1 and M-10 Grid Calibration Standards   |   Info M-1 and M-10 Grid Calibration Standards


Introduction

The EM-Tec M1 and M-10 calibration standards both have a square mesh type grid pattern etched in the surface of an ultra-flat Si substrate. The grid patterns are practical tools for magnification calibration and image distortion assessments. Intended for use with SEM, FESEM, FIB, Auger, SIMS and reflected light microscopy applications. The specimens can also be mounted directly on the pattern; in this case the pattern in the background will give a direct calibration within the image. This is especially useful when working with small samples and powders. The EM-Tec M1 and M-10 grid pattern calibration standards are supplied with a wafer level certificate of traceability to NIST.

There are two types of grid pattern calibration standards:

- EM-Tec M-1 with a 1µm pitch grid pattern for 100x to 10,000x magnification range
- EM-Tec M-10 with a 10um pitch grid pattern for 100x to 1000x magnification range


EM-Tec M-1 with 1µm pitch grid pattern for 100x to 10,000x magnification range

The EM-Tec M-1 has a grid pattern with a pitch of 1 µm and lines at 1, 10 and 100µm. Useful for calibration and image distortion checks in the 100x to 10,000x magnification range.  Alternatively, the samples can be placed directly on the grid pattern for immediate calibration or internal calibration in the image. This is particularly useful for small samples. The lines are etched directly into the ultra flat Si substrate which will give superior signal strength compared to SiO2 etched structures.

Specifications for the EM-Tec M-1 calibration standard with 1 µm pitch grid pattern

Substrate 525µm thick boron doped ultra-flat wafer with <100> orientation
Conductive Excellent; 5-10 Ohm resistivity
Pattern size 3 x 3mm
Pitch/precision 1µm ± 0.025µm, 10µm ± 0.025µm and 100µm ± 0.25µm
Line type /  depth Etched in Si, 300nm ± 30nm deep lines
Line width  200nm ± 10nm for 1µm pitch lines 
300nm ± 15nm for 10µm pitch lines
400nm ± 20nm for 100 µm pitch lines
Perpendicularity Better than 0.01°
Markers   Edge fiducial markers for grid position finding
Die size 4 x 4mm
Application SEM, FESEM, FIB, Auger, SIMS and reflected light microscopy
Identification Product ID with serial number etched
Mounting Unmounted, mounting optionally available
Supplied  Supplied in a Gel-Pak box
Certification Wafer level certificate of traceability to NIST

 

 

EM-Tec M-1 with 1µm pitch grid pattern for 100x to 10,000x magnification range

Details EM-Tec M-1 with 1µm pitch grid pattern
for 100x to 10,000x magnification range
order info

     

 

EM-Tec M-10 with 10µm pitch grid pattern for 100x to 1000x magnification range

The EM-Tec M-10 has a grid pattern with a pitch of 10 µm and lines at 10 and 100µm. Useful for calibration and image distortion check in the 100x to 1000x magnification range.  Samples can also be placed directly on the grid pattern for direct calibration or internal calibration in the image. This is practical for small samples. The lines are etched directly into the ultra flat Si substrate which will give superior signal compared to SiO2 etched structures.

Specifications for the EM-Tec M-10 calibration standard with 1 µm pitch grid pattern

Substrate 525µm thick boron doped ultra-flat wafer with <100> orientation
Conductive Excellent; 5-10 Ohm resistivity
Pattern size  3 x 3mm
Pitch/precision 10µm ± 0.025µm and 100µm ± 0.25µm
Line type /  depth Etched in Si, 300nm ± 30nm deep lines
Line width

300nm ± 15nm for 10µm pitch lines\

400nm ± 20nm for 100 µm pitch lines

Perpendicularity Better than 0.01°
Markers Edge fiducial markers for grid position finding
Die size 4 x 4mm
Application SEM, FESEM, FIB, Auger, SIMS and reflected light microscopy
Identification Product ID with serial number etched
Mounting Unmounted, mounting optionally available
Supplied Supplied in a Gel-Pak box
Certification Wafer level certificate of traceability to NIST

 

 

EM-Tec M-10 with 10µm pitch grid pattern for 100x to 1000x magnification range

Details EM-Tec M-10 with 10µm pitch grid pattern
for 100x to 1000x magnification range
order info

     

 

# AU-31-T34000   EM-Tec M-1 calibration standard with 1µm grid pattern

EM-Tec M-1 calibration standard with 1µm grid pattern 
EM-Tec M-1 with a 1µm pitch grid pattern is useful for calibration or image distortion asessments in the 100x to 10,000x magnification range. Pattern size is 3x3mm with lines directly etched in a conductive ultra-flat silicon substrate. Lines are 300nm deep with a width of 200nm for 1µm lines, 300nm for 10µm lines and 400nm for 100µm lines. Alternatively, small samples can be placed direction on the grid pattern for immediate calibration or integrated calibration in the image. This standard is NIST traceable; example of wafer level certificate of traceability for the Em-Tec M-1 grid pattern calibration standard.
Intended for SEM, FESEM, FIB, Auger, SIMS and reflected light microscopy

Full list of available specimen mounts for calibration standard and test specimens

 

# AU-31-T35000   EM-Tec M-10 calibration standard with 10µm grid pattern

EM-Tec M-10 calibration standard with 10µm grid pattern 
EM-Tec M-10 with a 10µm pitch grid pattern is useful for calibration or image distortion assessments in the 100x to 1000x magnification range. Pattern size is 3x3mm with lines directly etched in a conductive ultra-flat silicon substrate. Lines are 300nm deep with a width of 300nm for 10µm lines and 400nm for 100µm lines. Alternatively, small samples can be placed direction on the grid pattern for immediate calibration or integrated calibration in the image. This standard is NIST traceable; example of wafer level certificate of traceability for the Em-Tec M-10 grid pattern calibration standard.
Intended for SEM, table top SEM, FIB, Auger, SIMS and reflected light microscopy.

Full list of available specimen mounts for calibration standard and test specimens:

2 Item(s)

2 Item(s)