Silicon Wafers & Chips

Silicon wafers, substrates and sample supports

 Silicon Wafers & Chips   |   Ultra-flat Silicon Wafers & Chips   |   Thermal SiO2 Chips

 
Introduction

Si-wafer-2

Si wafers: 51mm, 100mm and 150mm diameter

 

Diced silicon wafer for EM

Diced silicon wafer

Polished silicon is an excellent substrate for imaging, experiments, nanotechnology and micro-fabrication applications.  It is available in the form of wafers, diced wafer or as smaller chips (pieces). The silicon wafer and chips all have a <100> orientation. Cleaving of the wafers to the desired size with a <100> orientation wafers is straight forward and simple. The silicon wafers and chips are all P-type, doped with B to provide excellent conductivity for SEM, FIB and STM applications.
For biological applications silicon resembles glass, which makes it a suitable support for growing and/or mounting cells. For imaging applications, it is an ideal sample substrate for small particles due to the low background signal of the highly polished surface.
Two grades of silicon substrates are offered:

  • Micro-Tec standard silicon wafers and silicon chips for standard application and medium resolution imaging.
  • Nano-Tec ultra-flat silicon wafers and ultra-flat silicon chips for demanding applications and high resolution imaging.

 

Micro-Tec <P/100> standard silicon wafers and diced wafer for SEM substrates

The Micro-Tec <P/100>  silicon wafer substrates can be used for sample substrates, micro-fabrication, substrate for thin film research or biological substrates. Useful flat substrate for SEM imaging of particles due to the low background. For biological applications, Si has similar properties as glass and can be used to mount or grow cells. Can be easily cleaved or used as a whole wafer. The Micro-Tec Si wafers are packed in a wafer carrier tray sfor protection. The diced wafer supplied on wafer adhesive disc and packed between two plastic sheets for protection. The Si chips can be easily lift off the adhesive sheet.
The Micro-Tec standard silicon wafer substrates are available as:

  • Ø2”/51mm <P/100>silicon wafers
  • Ø6”/150mm <P/100>silicon wafers
  • Diced Ø4”/100mm <P/100>silicon wafer in 5x5mm chips (~270 pieces)

 

Specifications of the Micro-Tec <P/100> standard silicon wafers and chips:

Parameter

Ø2”/51mm wafer

Ø6”/150mm wafer

Diced Ø4”/100mm

Product #

AU-10-008120

AU-10-008160

AU-10-008145

Orientation

<100>

Type

P (Boron) with one primary flat

Resistance

1-30 Ohm/cm

Coating

None, native oxide only

Thickness

275µm (+/- 20µm)

675µm (+/- 20µm)

525µm (+/- 20µm)

Diameter

51mm

150mm

100mm

Chip (die) size

n.a.

n.a.

5x5mm

Chip quantity

n.a.

n.a.

 ~270

TTV

≤ 20µm

Primary flat

15.9 +/- 1.65mm

57.5 +/- 2.5mm

32.5 +/- 2.5mm

Surface roughness

<1.5nm, polished on one side

 

Nano-Tec ultra-flat <P/100> silicon wafers and ultra-flat silicon chips

The Nano-Tec, ultra-flat P<100> silicon wafers have higher specifications than the Micro-Tec silicon wafers. They are preferred for demanding applications in micro-fabrication, as substrates for thin film research or biological substrates. Excellent ultra-flat surface for high resolution SEM imaging of particles due to the low background signal. For biological applications, Si has similar properties as glass and can be used to mount or grow cells. The larger wafers with the <100> orientation can be easily cleaved to the desired size. The ultra-flat Nano-Tec Si wafers are clean-room packed in a wafer carrier tray for protection. The ultra-flat Si chips are precision diced with a dicing saw, cleaned and clean-room packed in a gel-box. They can be easily lift off the gel substrate with flat tipped tweezers.
The Nano-Tec ultra-flat silicon wafers are available as:

  • Ø4”/100mm <P/100> ultra-flat silicon wafers
  • Ø6”/150mm <P/100> ultra-flat silicon wafers
  • Ultra-flat 5x5mm Si chips;  25 packaged in a gel box
  • Ultra-flat 5x5mm Si chips with 200nm thermal SiO2; 25 packaged in a gel box

 

Specifications of the Nano-Tec ultra-flat <P/100> silicon wafers and ultra-flat silicon chips:

Parameter

Ø4”/100mm wafer

Ø6”/150mm wafer

5x5mm chips

5x5mm chips with thermal SiO2

Product #

AU-10-008141

AU-10-008161

AU-10-008150

AU-10-008155

Orientation

<100>

Type

P (Boron) with one flats

Resistance

1-10 Ohm/cm

Grade

Prime / CZ Virgin

Coating

None, native oxide only

Thermal SiO2

Thickness

525µm (+/- 20µm)

675µm (+/- 20µm)

Diameter

100mm

150mm

150mm

150mm

Chip size

n.a.

n.a

5x5mm

5x5mm

Chips quantity

n.a.

n.a.

25

25

TTV

≤1.5µm

Bow

≤30µm

Warp

≤30µm

Primary flat

 32.5 +/- 2.5mm

57.5 +/- 2.5mm

Surface roughness

Typically 0.2- 0.3nm, polished one side

1 Item(s)

1 Item(s)